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Reference TypeReport
Identifier8JMKD3MGP3W34P/3LJEPR5
Repositorysid.inpe.br/mtc-m21b/2016/04.26.17.20
Metadatasid.inpe.br/mtc-m21b/2016/04.26.17.20.03
Sitemtc-m21b.sid.inpe.br
Report NumberINPE-1942-RPE/261
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Citation KeyFabbriLimaSilv:1980:ExSpHe
Author1 Fabbri, M.
2 Lima, I. C. da Cunha
3 Silva, A. Ferreira da
TitleExtrinsic specific heat of phosphorus doped silicon
Year1980
InstitutionInstituto Nacional de Pesquisas Espaciais
CitySão José dos Campos
KeywordsImpurity, disorder, correlation, specific heat.
AbstractThe theory of Matsubara and Toyozawa developed for impurity bands in semiconductors is investigated further in order to calculate the specific heat of Si:P. The effect of correlation as well as overlap on the electron hopping energy integral is taken into account via Heitler-London two-particle wave functions. The calculated specific heat shows good agreement when compared to the experimental data over a wide range of impurity concentration around the criticai value for MNM transition. The comparison between MT and AMO-MT calculations shows a big enhancement due to electron correlation. The results of the highly-correlated-electron-gas model and inhomogeneity model are shown for the sake of comparion.
Languageen
DisseminationBNDEPOSITOLEGAL
AreaFISPLASMA
Size473 KiB
Number of Files3
Last Update2020:01.21.11.31.32 sid.inpe.br/mtc-m21b/2013/09.26.14.25.20 sergio
Metadata Last Update2020:01.21.11.33.36 sid.inpe.br/mtc-m21b/2013/09.26.14.25.20 sergio {D 1980}
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sergio
simone
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Copyright Repositoryurlib.net/www/2012/11.12.15.10
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publicacao.pdf 21/01/2020 09:33 185.2 KiB
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agreement.html 26/04/2016 14:20 1.7 KiB
TERMO DE DEPOSITO ASSINADO MAURICIO FABBRI PRODUÇÃO CIENTIFICA.pdf 21/01/2020 09:31 172.3 KiB
History2016-04-26 17:20:50 :: simone -> administrator ::
2016-04-26 17:21:22 :: administrator -> simone ::
2016-04-26 17:35:49 :: simone -> administrator :: -> 1980
2018-06-04 03:24:19 :: administrator -> simone :: 1980
2020-01-21 11:30:28 :: simone -> sergio :: 1980
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Access Date2020, Feb. 17
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