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		<identifier>8JMKD3MGP3W34P/3LJEPR5</identifier>
		<repository>sid.inpe.br/mtc-m21b/2016/04.26.17.20</repository>
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		<site>mtc-m21b.sid.inpe.br 804</site>
		<reportnumber>INPE-1942-RPE/261</reportnumber>
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		<citationkey>FabbriLimaSilv:1980:ExSpHe</citationkey>
		<author>Fabbri, M.,</author>
		<author>Lima, I. C. da Cunha,</author>
		<author>Silva, A. Ferreira da,</author>
		<title>Extrinsic specific heat of phosphorus doped silicon</title>
		<year>1980</year>
		<institution>Instituto Nacional de Pesquisas Espaciais</institution>
		<city>São José dos Campos</city>
		<keywords>Impurity, disorder, correlation, specific heat.</keywords>
		<abstract>The theory of Matsubara and Toyozawa developed for impurity bands in semiconductors is investigated further in order to calculate the specific heat of Si:P. The effect of correlation as well as overlap on the electron hopping energy integral is taken into account via Heitler-London two-particle wave functions. The calculated specific heat shows good agreement when compared to the experimental data over a wide range of impurity concentration around the criticai value for MNM transition. The comparison between MT and AMO-MT calculations shows a big enhancement due to electron correlation. The results of the highly-correlated-electron-gas model and inhomogeneity model are shown for the sake of comparion.</abstract>
		<language>en</language>
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		<area>FISPLASMA</area>
		<size>473 KiB</size>
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		<url>http://mtc-m21b.sid.inpe.br/rep-/sid.inpe.br/mtc-m21b/2016/04.26.17.20</url>
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