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@TechReport{FabbriLimaSilv:1980:ExSpHe,
               author = "Fabbri, M. and Lima, I. C. da Cunha and Silva, A. Ferreira da",
                title = "Extrinsic specific heat of phosphorus doped silicon",
          institution = "Instituto Nacional de Pesquisas Espaciais",
                 year = "1980",
               number = "INPE-1942-RPE/261",
              address = "S{\~a}o Jos{\'e} dos Campos",
             keywords = "Impurity, disorder, correlation, specific heat.",
             abstract = "The theory of Matsubara and Toyozawa developed for impurity bands 
                         in semiconductors is investigated further in order to calculate 
                         the specific heat of Si:P. The effect of correlation as well as 
                         overlap on the electron hopping energy integral is taken into 
                         account via Heitler-London two-particle wave functions. The 
                         calculated specific heat shows good agreement when compared to the 
                         experimental data over a wide range of impurity concentration 
                         around the criticai value for MNM transition. The comparison 
                         between MT and AMO-MT calculations shows a big enhancement due to 
                         electron correlation. The results of the 
                         highly-correlated-electron-gas model and inhomogeneity model are 
                         shown for the sake of comparion.",
           copyholder = "SID/SCD",
             language = "en",
                  ibi = "8JMKD3MGP3W34P/3LJEPR5",
                  url = "http://urlib.net/rep/8JMKD3MGP3W34P/3LJEPR5",
        urlaccessdate = "17 fev. 2020"
}


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