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Metadados

%0 Report
%4 sid.inpe.br/mtc-m21b/2016/04.26.17.20
%2 sid.inpe.br/mtc-m21b/2016/04.26.17.20.03
%@ INPE-1942-RPE/261
%A Fabbri, M.,
%A Lima, I. C. da Cunha,
%A Silva, A. Ferreira da,
%T Extrinsic specific heat of phosphorus doped silicon
%D 1980
%I Instituto Nacional de Pesquisas Espaciais
%C São José dos Campos
%K Impurity, disorder, correlation, specific heat.
%X The theory of Matsubara and Toyozawa developed for impurity bands in semiconductors is investigated further in order to calculate the specific heat of Si:P. The effect of correlation as well as overlap on the electron hopping energy integral is taken into account via Heitler-London two-particle wave functions. The calculated specific heat shows good agreement when compared to the experimental data over a wide range of impurity concentration around the criticai value for MNM transition. The comparison between MT and AMO-MT calculations shows a big enhancement due to electron correlation. The results of the highly-correlated-electron-gas model and inhomogeneity model are shown for the sake of comparion.
%@language en


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