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1. Identificação
Tipo de ReferênciaArtigo em Revista Científica (Journal Article)
Código do Detentorisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Sitemtc-m21b.sid.inpe.br (namespace prefix: upn:3ET5SFU)
Identificador8JMKD3MGP3W34P/3MA6RCP
Repositóriosid.inpe.br/mtc-m21b/2016/08.19.18.44   (acesso restrito)
Última Atualização2016:08.19.18.45.56 (UTC) simone
Repositório de Metadadossid.inpe.br/mtc-m21b/2016/08.19.18.44.34
Última Atualização dos Metadados2018:06.04.02.41.03 (UTC) administrator
DOI10.1088/0957-4484/27/30/305701
ISSN0957-4484
Chave de CitaçãoChiappimTDPFGGVM:2016:InO2Pl
TítuloRelationships among growth mechanism, structure and morphology of PEALD TiO2 films: the influence of O2 plasma power, precursor chemistry and plasma exposure mode
Ano2016
MêsJuly
Data de Acesso12 set. 2026
Tipo de Trabalhojournal article
Tipo SecundárioPRE PI
Número de Arquivos1
Tamanho3538 KiB
2. Contextualização
Autor1 Chiappim, William
2 Testoni, Georgio Ernesto
3 Doria, A. C. O. C.
4 Pessoa, R. S.
5 Fraga, Mariana Amorim
6 Galvão, N. K. A. M.
7 Grigorov, K. G.
8 Vieira, L.
9 Maciel, H. S.
Grupo1
2
3
4
5 LAS-CTE-INPE-MCTI-GOV-BR
Afiliação1 Universidade do Vale do Paraíba (UNIVAP)
2 Universidade do Vale do Paraíba (UNIVAP)
3 Universidade do Vale do Paraíba (UNIVAP)
4 Universidade do Vale do Paraíba (UNIVAP)
5 Instituto Nacional de Pesquisas Espaciais (INPE)
6 Instituto Tecnológico de Aeronáutica (ITA)
7 Space Research and Technology Institute
8 Universidade do Vale do Paraíba (UNIVAP)
9 Universidade do Vale do Paraíba (UNIVAP)
Endereço de e-Mail do Autor1
2
3
4
5 mariana.fraga@inpe.br
RevistaNanotechnology
Volume27
Número30
Páginas305701
Nota SecundáriaA1_QUÍMICA A1_ODONTOLOGIA A1_MEDICINA_I A1_MATERIAIS A1_INTERDISCIPLINAR A1_FARMÁCIA A1_ENGENHARIAS_III A1_ENGENHARIAS_II A2_MEDICINA_II A2_ENGENHARIAS_IV A2_CIÊNCIAS_BIOLÓGICAS_II A2_CIÊNCIAS_BIOLÓGICAS_I B1_ASTRONOMIA_/_FÍSICA B2_ENSINO
Acervo Hospedeirosid.inpe.br/mtc-m21b/2013/09.26.14.25.20 upn:3ET5SFU
Histórico (UTC)2016-08-19 18:44:34 :: simone -> administrator ::
2016-08-19 18:44:34 :: administrator -> simone :: 2016
2016-08-19 18:45:57 :: simone -> administrator :: 2016
2018-06-04 02:41:03 :: administrator -> simone :: 2016
3. Conteúdo e estrutura
É a matriz ou uma cópia?é a matriz
Estágio do Conteúdoconcluido
Transferível1
Tipo do ConteúdoExternal Contribution
Tipo de Versãopublisher
Palavras-ChaveBrazilian MRS
plasma-enhanced atomic layer deposition
titanium dioxide
x-ray diffraction
morphology
RBS
ResumoTitanium dioxide (TiO2) thin films have generated considerable interest over recent years, because they are functional materials suitable for a wide range of applications. The efficient use of the outstanding functional properties of these films relies strongly on their basic characteristics, such as structure and morphology, which are affected by deposition parameters. Here, we report on the influence of plasma power and precursor chemistry on the growth kinetics, structure and morphology of TiO2 thin films grown on Si(100) by plasma-enhanced atomic layer deposition (PEALD). For this, remote capacitively coupled 13.56 MHz oxygen plasma was used to act as a co-reactant during the ALD process using two different metal precursors: titanium tetrachloride (TiCl4) and titanium tetraisopropoxide (TTIP). Furthermore, we investigate the effect of direct plasma exposure during the co-reactant pulse on the aforementioned material properties. The extensive characterization of TiO2 films using Rutherford backscattering spectroscopy, ellipsometry, x-ray diffraction (XRD), field-emission scanning electron microscopy, and atomic force microscopy (AFM) have revealed how the investigated process parameters affect their growth per cycle (GPC), crystallization and morphology. The GPC tends to increase with plasma power for both precursors, however, for the TTIP precursor, it starts decreasing when the plasma power is greater than 100 W. From XRD analysis, we found a good correlation between film crystallinity and GPC behavior, mainly for the TTIP process. The AFM images indicated the formation of films with grain size higher than film thickness (grain size/film thickness ratio approximate to 20) for both precursors, and plasma power analysis allows us to infer that this phenomenon can be directly related to the increase of the flux of energetic oxygen species on the substrate/growing film surface. Finally, the effect of direct plasma exposure on film structure and morphology was evidenced showing that the grid removal causes a drastic reduction in the grain size, particularly for TiO2 synthesized using TiCl4.
ÁreaFISMAT
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4. Condições de acesso e uso
Idiomaen
Arquivo Alvochiappim_relationships.pdf
Grupo de Usuáriossimone
Grupo de Leitoresadministrator
simone
Visibilidadeshown
Política de Arquivamentodenypublisher denyfinaldraft12
Permissão de Leituradeny from all and allow from 150.163
Permissão de Atualizaçãonão transferida
5. Fontes relacionadas
Repositório Espelhourlib.net/www/2011/03.29.20.55
Unidades Imediatamente Superiores8JMKD3MGPCW/3ESR3H2
Lista de Itens Citandosid.inpe.br/bibdigital/2013/09.24.19.30 - 77
DivulgaçãoWEBSCI; PORTALCAPES; COMPENDEX.
6. Notas
Campos Vaziosalternatejournal archivist callnumber copyholder copyright creatorhistory descriptionlevel e-mailaddress format isbn label lineage mark nextedition notes orcid parameterlist parentrepositories previousedition previouslowerunit progress project resumeid rightsholder schedulinginformation secondarydate secondarykey session shorttitle sponsor subject tertiarymark tertiarytype url
7. Controle da descrição
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