@InProceedings{SilvaLimaKishFabb:1982:ExSpHe,
author = "Silva, Antonio Ferreira and Lima, Ivan Costa da Cunha and Kishore,
Ram and Fabbri, Maur{\'{\i}}cio",
affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto
Nacional de Pesquisas Espaciais (INPE)} and {Instituto Nacional de
Pesquisas Espaciais (INPE)} and {Instituto Nacional de Pesquisas
Espaciais (INPE)}",
title = "Extrinsic specific heat and susceptibility of Si:P using the
hubbard model for disordered systems",
year = "1982",
organization = "International Conference on the Physics of Semiconductors, 16.",
abstract = "A self-consistent many-body theory of disordered systems, decribed
by the Hubbard Hamiltonian with random transfer integrals, has
been developed in the presence of a magnetic field and impurity
correlation, incorporated through a hard core pair correlation
function. The low temperature electronic specific heat and the
zero temperature susceptibility of uncompensated P doped Si have
been calculated as a function of impurity concentration and
compared with experimental data. It is found that for the upper
Hubbard band centeredat the corresponding value of D the specific
heat agrees wel lwith experiment in the entire
semiconductor-to-dilute-metallic region. Both the electron and
impurity correlation enhance the susceptibility and quench the
specific heat. The behavior of the relative change in the specific
heat due to the magnetic field agrees qualitatively with the low
temperature experimental results.",
language = "en",
urlaccessdate = "2024, Apr. 29"
}