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1. Identity statement
Reference TypeJournal Article
Sitemtc-m21c.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier8JMKD3MGP3W34R/432C7KP
Repositorysid.inpe.br/mtc-m21c/2020/08.05.11.14   (restricted access)
Last Update2020:08.05.11.14.39 (UTC) simone
Metadata Repositorysid.inpe.br/mtc-m21c/2020/08.05.11.14.39
Metadata Last Update2022:01.04.01.35.18 (UTC) administrator
DOI10.1557/adv.2020.202
ISSN2059-8521
Citation KeyFornariAbrRapKycMor:2020:MoCoVa
TitleMorphology control in van der Waals epitaxy of bismuth telluride topological insulators
Year2020
Access Date2024, Apr. 24
Type of Workjournal article
Secondary TypePRE PI
Number of Files1
Size1762 KiB
2. Context
Author1 Fornari, Celso Israel
2 Abramof, Eduardo
3 Rappl, Paulo Henrique de Oliveira
4 Kycia, Stefan W.
5 Morelhão, Sérgio Luiz
Resume Identifier1
2 8JMKD3MGP5W/3C9JGUH
3 8JMKD3MGP5W/3C9JJ37
Group1 CMS-ETES-SESPG-INPE-MCTIC-GOV-BR
2 LABAS-COCTE-INPE-MCTIC-GOV-BR
3 LABAS-COCTE-INPE-MCTIC-GOV-BR
Affiliation1 Instituto Nacional de Pesquisas Espaciais (INPE)
2 Instituto Nacional de Pesquisas Espaciais (INPE)
3 Instituto Nacional de Pesquisas Espaciais (INPE)
4 University of Guelph
5 Universidade de São Paulo
Author e-Mail Address1 celso.fornari@inpe.br
2 eduardo.abramof@inpe.br
3 paulo.rappl@inpe.br
JournalMRS Advances
Volume5
Number35/36
Pages1891-1897
History (UTC)2020-08-05 11:16:23 :: simone -> administrator :: 2020
2022-01-04 01:35:18 :: administrator -> simone :: 2020
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
Version Typepublisher
Keywordsmolecular beam epitaxy (MBE)
x-ray diffraction (XRD)
atom probe microscopy
quantum materials
Bi
AbstractBismuth telluride have regained significant attention as a prototype of topological insulator. Thin films of high quality have been investigated as a basic platform for novel spintronic devices. Low mobility of bismuth and high desorption coefficient of telluride compose a scenario where growth parameters have drastic effects on structural and electronic properties of the films. Recently [J. Phys. Chem. C 2019, 123, 24818-24825], a detailed investigation has been performed on the dynamics of defects in epitaxial films of this material, revealing the impact of film/substrate lattice misfit on the films' lateral coherence. Very small lattice misfit (<0.05%) are expected to have no influence on quality of epitaxial system with atomic layers weakly bonded to each other by van der Waals forces, contrarily to what was observed. In this work, we investigate the correlation between lattice misfit and size and morphology of the film crystalline domains. Three-dimensional reciprocal-space maps of film Bragg reflections obtained with synchrotron X-rays are used to visualize the spatial conformation of the crystallographic domains through film thickness, while atomic force microscopy images provide direct information of the domains morphology at the film surface.
AreaFISMAT
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4. Conditions of access and use
Languageen
Target Filefornari_morphology.pdf
User Groupsimone
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Visibilityshown
Read Permissiondeny from all and allow from 150.163
Update Permissionnot transferred
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
8JMKD3MGPCW/3F358GL
Citing Item Listsid.inpe.br/bibdigital/2013/09.24.19.30 3
sid.inpe.br/mtc-m21/2012/07.13.14.57.50 1
sid.inpe.br/bibdigital/2013/10.14.21.39 1
DisseminationWEBSCI; PORTALCAPES.
Host Collectionurlib.net/www/2017/11.22.19.04
6. Notes
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