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@Article{FornariAbrRapKycMor:2020:MoCoVa,
               author = "Fornari, Celso Israel and Abramof, Eduardo and Rappl, Paulo 
                         Henrique de Oliveira and Kycia, Stefan W. and Morelh{\~a}o, 
                         S{\'e}rgio Luiz",
          affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto 
                         Nacional de Pesquisas Espaciais (INPE)} and {Instituto Nacional de 
                         Pesquisas Espaciais (INPE)} and {University of Guelph} and 
                         {Universidade de S{\~a}o Paulo}",
                title = "Morphology control in van der Waals epitaxy of bismuth telluride 
                         topological insulators",
              journal = "MRS Advances",
                 year = "2020",
               volume = "5",
               number = "35/36",
                pages = "1891--1897",
             keywords = "molecular beam epitaxy (MBE), x-ray diffraction (XRD), atom probe 
                         microscopy, quantum materials, Bi.",
             abstract = "Bismuth telluride have regained significant attention as a 
                         prototype of topological insulator. Thin films of high quality 
                         have been investigated as a basic platform for novel spintronic 
                         devices. Low mobility of bismuth and high desorption coefficient 
                         of telluride compose a scenario where growth parameters have 
                         drastic effects on structural and electronic properties of the 
                         films. Recently [J. Phys. Chem. C 2019, 123, 24818-24825], a 
                         detailed investigation has been performed on the dynamics of 
                         defects in epitaxial films of this material, revealing the impact 
                         of film/substrate lattice misfit on the films' lateral coherence. 
                         Very small lattice misfit (<0.05%) are expected to have no 
                         influence on quality of epitaxial system with atomic layers weakly 
                         bonded to each other by van der Waals forces, contrarily to what 
                         was observed. In this work, we investigate the correlation between 
                         lattice misfit and size and morphology of the film crystalline 
                         domains. Three-dimensional reciprocal-space maps of film Bragg 
                         reflections obtained with synchrotron X-rays are used to visualize 
                         the spatial conformation of the crystallographic domains through 
                         film thickness, while atomic force microscopy images provide 
                         direct information of the domains morphology at the film 
                         surface.",
                  doi = "10.1557/adv.2020.202",
                  url = "http://dx.doi.org/10.1557/adv.2020.202",
                 issn = "2059-8521",
             language = "en",
           targetfile = "fornari_morphology.pdf",
        urlaccessdate = "2024, Mar. 29"
}


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