%0 Conference Proceedings
%4 sid.inpe.br/mtc-m21b/2015/03.30.12.02
%2 sid.inpe.br/mtc-m21b/2015/03.30.12.02.23
%T Extrinsic specific heat and susceptibility of Si:P using the hubbard model for disordered systems
%D 1982
%A Silva, Antonio Ferreira,
%A Lima, Ivan Costa da Cunha,
%A Kishore, Ram,
%A Fabbri, Maurício,
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@electronicmailaddress
%@electronicmailaddress
%@electronicmailaddress kishore@las.inpe.br
%B International Conference on the Physics of Semiconductors, 16.
%X A self-consistent many-body theory of disordered systems, decribed by the Hubbard Hamiltonian with random transfer integrals, has been developed in the presence of a magnetic field and impurity correlation, incorporated through a hard core pair correlation function. The low temperature electronic specific heat and the zero temperature susceptibility of uncompensated P doped Si have been calculated as a function of impurity concentration and compared with experimental data. It is found that for the upper Hubbard band centeredat the corresponding value of D the specific heat agrees wel lwith experiment in the entire semiconductor-to-dilute-metallic region. Both the electron and impurity correlation enhance the susceptibility and quench the specific heat. The behavior of the relative change in the specific heat due to the magnetic field agrees qualitatively with the low temperature experimental results.
%@language en